Fabrication of high-aspect ratio silicon nanopillars and nanocones using deep reactive ion etching
نویسندگان
چکیده
منابع مشابه
High Aspect-ratio Nanoscale Etching in Silicon Using Electron Beam Lithography and Deep Reactive Ion Etching (drie) Technique
This work is dedicated to my dear grandmother, who has not only taught me that learning is a lifelong matter, but has also inspired me by being an example herself even at the age of 80. for the help on design and modeling; and all the members of the IMEMS group for creating a collaborative and pleasant atmosphere. Special thanks to all the MiRC Cleanroom staff, who I am greatly indebted to, for...
متن کاملCryogenic Deep Reactive Ion Etching of Silicon Micro and Nanostructures
OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNOLOGY P.O. BOX 1000, FI-02015 TKK
متن کاملThe fabrication of silicon nanostructures by local gallium implantation and cryogenic deep reactive ion etching.
We show that gallium-ion-implanted silicon serves as an etch mask for fabrication of high aspect ratio nanostructures by cryogenic plasma etching (deep reactive ion etching). The speed of focused ion beam (FIB) patterning is greatly enhanced by the fact that only a thin approx. 30 nm surface layer needs to be modified to create a mask for the etching step. Etch selectivity between gallium-doped...
متن کاملMaximum achievable aspect ratio in deep reactive ion etching of silicon due to aspect ratio dependent transport and the microloading effect
When etching high-aspect-ratio silicon features using deep reactive ion etching DRIE , researchers find that there is a maximum achievable aspect ratio, which we define as the critical aspect ratio, of an etched silicon trench using a DRIE process. At this critical aspect ratio, the apparent etch rate defined as the total depth etched divided by the total elapsed time no longer monotonically de...
متن کاملFabrication of densely packed, well-ordered, high-aspect-ratio silicon nanopillars over large areas using block copolymer lithography
The fabrication process for well-ordered nanopillars over large substrate areas, which are taller than 100nm, have aspect ratios as high as 10 :1 and occur with a periodicity of less than 35nm is described. Various unique aspects of the materials and processing techniques enabled key features of the nanostructures: block copolymer lithography facilitated the small periodicity and the well-order...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
سال: 2009
ISSN: 1071-1023
DOI: 10.1116/1.3246359